2SD2633 डाटा शीट PDF( Datasheet )

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= 6A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) ·Low Collector-Emitter Saturation Volt

Power Transistor 2SD2633 Absolute Maximum Ratings (Ta=25ºC) Symbol Ratings Unit VCBO 200 V VCEO 150 V VEBO 6V IC 8 A IB 1 A PC 35 (Tc=25ºC) 2 (Ta=25ºC, No Fin) W Tj 150 ºC Tstg –55 to +1