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2SD2583 | NPN Transistor DATA SHEET
SILICON TRANSISTOR
2SD2583
AUDIO FREQUENCY AMPLIFIER, SWITCHING NOPN SILICON EPITAXIAL TRANSISTORS
FEATURES
• Low VCE(sat) VCE(sat) = 0.15 V Max (@lC/lB = 1.0 A/50 mA) • High DC Current Gain h |
NEC |
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2SD2583 | Silicon NPN transistor 2SD2583
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
TO-126F 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-126F Plastic Package.
特征 / Features
饱和压降低;直流电增 |
BLUE ROCKET ELECTRONICS |
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2SD2583 | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector Current-IC= 5A ·Low Saturation Voltage -
: VCE(sat)= 0.15V(Max)@ IC=1A, IB= 50mA ·High DC Current Gain-
: hFE= 150~600@ IC= 1A ·Minimum Lot-to-L |
Inchange Semiconductor |
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2SD2583 | NPN Silicon Epitaxial Power Transistor 2SD2583
®
2SD2583
Pb
Pb Free Plating Product
NPN Silicon Epitaxial Power Transistor
FEATURES • Low VCE(sat)
VCE(sat) = 0.15 V Max (@lC/lB = 1.0 A/50 mA) • High DC Current Gain
hEF = 150 to 600 (@VCE |
Thinki Semiconductor |
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