2SD2531 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 1.0 (Max)@ IC= 2.5A ·High Power Dissipation- : PC= 25W@ TC= 25℃ ·Minimum Lot-to-Lot variations for robust device

2SD2531 Rev.F Mar.-2016 DATA SHEET 描述 / Descriptions TO-220F 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220F Plastic Package.  特征 / Features 饱和压降低，集电极耗

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2531 Power Amplifier Applications 2SD2531 Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (typ.) (IC = 2.5 A, IB = 0.25 A) • High powe