डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD2490 | NPN Transistor isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
2SD2490
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min) ·High DC current gain
: hFE= 1000(Min) @IC= 1A ·Low Collec |
INCHANGE |
|
2SD2499 | Silicon NPN Transistor | Toshiba Semiconductor |
|
2SD2498 | NPN Transistor | Toshiba Semiconductor |
|
2SD2499 | SILICON POWER TRANSISTOR | SavantIC |
|
2SD2498 | SILICON POWER TRANSISTOR | SavantIC |
|
2SD2493 | Silicon NPN Transistor | Sanken electric |
|
2SD2494 | SILICON POWER TRANSISTOR | SavantIC |
|
2SD2494 | Silicon NPN Transistor | Sanken electric |
|
2SD2499 | NPN Transistor | INCHANGE |
|
2SD2495 | Silicon NPN Transistor | Sanken electric |
|
2SD2493 | SILICON POWER TRANSISTOR | SavantIC |
www.DataSheet.in | 2017 | संपर्क |