2SD2385 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| 2SD2385 | NPN Transistor 2SD2385
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor)
2SD2385
Power Amplifier Applications
Unit: mm
· High breakdown voltage: VCEO = 140 V (min) · Complementary to 2SB15 |
 Toshiba Semiconductor |
|
| 2SD2385 | NPN Transistor isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min) ·High DC Current Gain-
: hFE= 5000(Min)@IC= 7A ·Complement to Type 2SB1556 ·Minimum Lot-t |
 INCHANGE |
शेयर लिंक :
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