2SD235 डाटा शीट PDF( Datasheet )

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD235 www.datasheet4u.com DESCRIPTION ·With TO-220 package ·Complement to type 2SB435 APPLICATIONS ·For low frequency power am

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 3.0A ·Complement to Type 2SB435

2SD2351 General Purpose Transistor (50V, 150mA) Parameter VCEO IC Value 50V 150mA lFeatures 1)High DC current gain. 2)High emitter-base voltage. (VCBO=12V) 3)Low saturation voltage. 　 (Max. VCE(sat)=300mV

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2352 Power Amplifier Applications 2SD2352 Unit: mm • High DC current gain: hFE = 800 to 3200 • Low collector saturation voltage: VCE (sat) = 0.3 V (t

2SD2353 Rev.F Mar.-2016 DATA SHEET 描述 / Descriptions TO-220F 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220F Plastic Package.  特征 / Features 直流增益高,VCESAT 饱和

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2353 Power Amplifier Applications 2SD2353 Unit: mm • High DC current gain: hFE = 800 to 3200 • Low collector saturation voltage: VCE (sat) = 0.4 V (t

Transistor 2SD2357 Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1537 Unit: mm s Features 2.6±0.1 4.5±0.1 1.6±0.2 1.5±0.1 q q q 1.0–0.2 +0.1 Low collector t