2SD234 डाटा शीट PDF( Datasheet )

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD234 DESCRIPTION ·With TO-220 package ·Complement to type 2SB434 APPLICATIONS ·For low frequency power amplifier and switching

isc Silicon NPN Power Transistor 2SD234 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 3.0A ·Complement to Type

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2340 www.datasheet4u.com DESCRIPTION ·With TO-3PN package ·DARLINGTON ·High DC current gain APPLICATIONS ·Audio ,regulator

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD2340 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V(Min) ·High DC Current Gain : hFE= 5000(Min) @IC= 3A ·Low Collec

Transistors 2SB1236 / 2SB1186 2SC4132 / 2SD1857 / 2SD2343 / 2SD1763 (94L-268-A56) (96-175-C56) 276

Transistor 2SD2345 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 1.6±0.15 s Features q q q q 0.4 0.8±0.1 0.4 High foward current transfer ratio hFE. Low collector to emitte

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2348 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Low Saturation Voltage ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-