डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD227 | Transistors Transistors 2SD227
Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
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USHA |
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2SD2271 | Silicon NPN Transistor 2SD2271
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington Power Transistor)
2SD2271
Motor Drive Applications High-Current Switching Applications
Unit: mm
• High DC current gain: hFE = 500 (mi |
Toshiba Semiconductor |
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2SD2271 | Silicon NPN Darlington Power Transistor isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE= 500(Min)@ (VCE= 2V, IC= 5A) ·High Breakdown Voltage :VCEO(sus)=200V(Min) ·Minimum Lot-to-Lot variations for robust de |
INCHANGE |
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2SD2273 | Silicon NPN Transistor Power Transistors
2SD2273
Silicon NPN triple diffusion planar type Darlington
For power amplification Complementary to 2SB1500
φ 3.3±0.2 5.0±0.3 3.0
Unit: mm
20.0±0.5
s Features
q q q
6.0
1.5
1.5
So |
Panasonic Semiconductor |
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2SD2275 | Silicon NPN Transistor Power Transistors
2SD2275
Silicon NPN triple diffusion planar type Darlington
For power amplification Complementary to 2SB1502
φ 3.3±0.2 5.0±0.3 3.0
Unit: mm
20.0±0.5
s Features
q q q
6.0
1.5
1.5
So |
Panasonic Semiconductor |
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2SD2275 | NPN Transistor isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min) ·High DC Current Gain-
: hFE= 5000( Min.) @(IC= 4A, VCE= 5V) ·Low Collector Saturation Vol |
INCHANGE |
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2SD2276 | Silicon NPN Transistor Power Transistors
2SD2276
Silicon NPN triple diffusion planar type Darlington
For power amplification Complementary to 2SB1503
φ 3.3±0.2 5.0±0.3 3.0
Unit: mm
20.0±0.5
s Features
q q q
6.0
1.5
1.5
So |
Panasonic Semiconductor |
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