2SD2241 डाटा शीट PDF( Datasheet )

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2241 Switching Applications 2SD2241 Unit: mm • High DC current gain: hFE = 2000 (min) • Low saturation voltage: VCE (sat) = 1.5 V (max) • Complementary t

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2241 www.datasheet4u.com DESCRIPTION ·With TO-220F package ·High DC current gain : hFE=2000 (Min) ·Low saturation voltage ·

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain