डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD2161 | Silicon NPN Power Transistor isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min) ·High DC Current Gain-
: hFE= 2000(Min)@ (VCE= 2V, IC= 2A) ·Low Collector Saturation Voltag |
Inchange Semiconductor |
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2SD2161 | NPN Transistor DATA SHEET
SILICON POWER TRANSISTOR
www.DataSheet4U.com
2SD2161
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
The 2SD2161 is a Darlingto |
NEC |
www.DataSheet.in | 2017 | संपर्क |