2SD2150 डाटा शीट PDF( Datasheet )

Low Frequency Transistor (20V, 3A) 2SD2150 zFeatures 1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) （IC / IB = 2A / 0.1A） 2) Excellent current gain characteristics. 3) Complements the 2SB1424. zStructure Epitaxia

Plastic-Encapsulate Transistors FEATURES Excellent current-to-gain characteristics Low collector saturation voltage VCE(sat) VCE(sat)=0.5V(max) for IC/IB=2A/0.1A 2SD2150(NPN) MAXIMUM RATINGS (TA=25 unless ot

Production specification LOW FREQUENCY TRANSISTER（20V，3A） FEATURES z Low VCE(sat) :VCE(sat) =0.2V(Typ.) (IC/IB=2A/0.1A). z Excellent current gain characteristics. z Complements the 2SB1424. Pb Lead-fre

www.DataSheet.co.kr JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SD2150 SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 TRANSISTOR NPN FEATURES Power dissipation :

www.DataSheet.co.kr 2SD2150 NPN Epitaxial Planar Transistors P b Lead(Pb)-Free SOT-89 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating Collector-Base Voltage Collector-Emitte

www.DataSheet.co.kr SMD Type Low Frequency Transistor 2SD2150 Transistors SOT-89 4.50 +0.1 -0.1 Unit: mm 1.50 +0.1 -0.1 +0.1 1.80-0.1 Features +0.1 2.50-0.1 Low VCE(sat). Excellent DC current gain charac

Elektronische Bauelemente 2SD2150 3 A, 40 V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Excellent Current-to-Gain Characteristics Lo