2SD2118 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2118 DESCRIPTION ·High current capacity ·Small and slim package making it easy to make 2SD2118-used set smaller ·Low collector-to-emitter saturati

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors 2SD2118 TRANSISTOR (NPN) FEATURES z Low VCE(sat). VCE(sat) = 0.25V (Typ.)(IC/IB = 4A / 0.1A) z Excellent DC Current

Low VCE(sat) Transistor (strobe flash) FEATURES  Low VCE(sat) VCE(sat)=0.25V(Typ). (IC/IB-4A/0.1A) Pb Lead-free  Excellent DC current gain characteristics.  Complements the 2SB1412. Production sp

Low VCE(sat) transistor (strobe flash) 2SD2118 zFeatures 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC/IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1412. zDimensions (Uni

Elektronische Bauelemente 2SD2118 5A , 50V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low VCE(sat). VCE(sat) = 0.25V(Typ.) (IC/IB =

2SD2118(BR3DA2118D) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-252 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-252 Plastic Package. 特征 / Features hFE 线性好，饱和

SMD Type Transistors Low VCE(sat) Transistor 2SD2118 Features Low VCE(sat). Excellent DC current gain characteristics. NPN silicon transistor. +9.70 0.2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1