2SD2083 डाटा शीट PDF( Datasheet )

Darlington 2SD2083 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=120V VEB=6V IC=25mA VCE=4V, IC=12A IC=12A, IB=24mA IC=12A, IB=24mA VCE=12V, IE=–1A VCB=10V

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain : hFE= 2000(Min.)@ IC= 12A, VCE= 4V ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min) ·Complement to Type 2SB138