2SD2082 डाटा शीट PDF( Datasheet )

Darlington 2SD2082 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=120V VEB=6V IC=10mA VCE=4V, IC=8A IC=8A, IB=16mA IC=8A, IB=16mA VCE=12V, IE=–1A VCB=10V, f

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain- : hFE= 2000( Min.) @(IC= 8A, VCE= 4V) ·Low Collector Saturation Vol

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2082 www.datasheet4u.com DESCRIPTION ·With TO-3PML package ·DARLINGTON ·Complement to type 2SB1382 APPLICATIONS ·Driver for