2SD207 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD207 DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min.) ·Low Collector Saturation Voltage·H

Transistor 2SD2074 Silicon NPN epitaxial planer type For low-frequency output amplification For muting For DC-DC converter Unit: mm 6.9±0.1 0.15 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.5 4.5±0.1 0.7 4.0 q q q

TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD2079 2SD2079 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm • High DC current gain: hFE (1) = 2

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= 3V, IC= 3A) ·Low Collector Saturation Voltag

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2079 www.datasheet4u.com DESCRIPTION ·With TO-220F package ·DARLINGTON ·High DC current gain ·Low collector saturation volt