डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD2065 | NPN Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB1372 ·Minimum Lot-to-Lot |
INCHANGE |
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2SD2065 | Silicon NPN Transistor Power Transistors
2SD2065
www.DataSheet4U.com Silicon NPN triple diffusion planar type
For high power amplification Complementary to 2SB1372
Unit: mm
q
q q q q
16.2±0.5 12.5 3.5 Solder Dip
Satisfactory |
Panasonic |
www.DataSheet.in | 2017 | संपर्क |