2SD2051 डाटा शीट PDF( Datasheet )

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD2051 DESCRIPTION ·High DC Current Gain : hFE= 4000(Min) @IC= 1A ·Low Collector Saturation Voltgae- : VCE(sat)= 1.5V(Max.)@ IC= 1A ·Inco

Power Transistors 2SD2051 Silicon NPN epitaxial planar type Darlington For low-frequency amplification 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 4.2±0.2 Unit: mm 7.5±0.2 s Features q q q 4.0 High