2SD2045 डाटा शीट PDF( Datasheet )

Darlington sAbsolute maximum ratings Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2045 120 120 6 6(Pulse10) 1 50(Tc=25°C) 150 –55 to +150 2SD2045 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(s

Elektronische Bauelemente 2SD2045 NPN - PNP Plastic-Encapsulate Transistors RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURE 40V complementary device Mounting cost and area

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain