डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD2016 | Silicon NPN Transistor 2SD2016 Darlington
Equivalent C circuit B
(2kΩ) (200Ω) E
Silicon NPN Triple Diffused Planar Transistor
Application : Igniter, Relay and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol
Rati |
Sanken electric |
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2SD2016 | NPN Transistor isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max) @IC= 1A ·High DC Current Gain |
INCHANGE |
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