2SD198 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor isc Product Specification 2SD198 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Excellent Safe Operating Area ·Fast Switching Speed ·With TO

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD198 www.datasheet4u.com DESCRIPTION ·With TO-3 package ·High breakdown voltage APPLICATIONS ·voltage regulator ·Inverters

isc Silicon NPN Power Transistor DESCRIPTION ·Darlington connection for high DC current gain ·Built in resistor between base and emitter ·Built in damper diode ·Complementary PNP types:2SB1316 ·100% avala

Power Transistor (100V, 2A) 2SD1980 Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1316. inner

Ordering number:EN2534 NPN Epitaxial Planar Silicon Darlington Transistor 2SD1981 Driver Applications Applications · Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. Package

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD1982 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Low Collector Saturation Voltage ·High DC Current Gain ·

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1983 DESCRIPTION ·High DC Current Gain : hFE= 4000(Min) @IC= 1A ·Low Collector Saturation Voltgae- : VCE(sat)= 1.5V(Max.)@ IC= 1A ·Inc