डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD1966 | NPN Transistor isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1966
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Minimum Lot-to-L |
INCHANGE |
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2SD1960 | NPN Silicon Transistor | Rohm |
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2SD1961 | (2SD1961 - 2SD2098) Low Frequency Silicon Power NPN Transistor | ROHM Electronics |
|
2SD1963 | Power Transistor | Rohm |
|
2SD1962M | (2SD1961 - 2SD2098) Low Frequency Silicon Power NPN Transistor | ROHM Electronics |
|
2SD1963 | Power Transistor | Kexin |
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2SD1964 | Silicon NPN Transistor | Panasonic Semiconductor |
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2SD1966 | NPN Transistor | INCHANGE |
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