डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD1923 | NPN Transistor INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1923
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max |
INCHANGE |
|
2SD1922 | Silicon NPN Transistor | Hitachi Semiconductor |
|
2SD1929 | Transistor | Rohm |
|
2SD1928 | Power Transistor | Inchange Semiconductor |
|
2SD1923 | NPN Transistor | INCHANGE |
www.DataSheet.in | 2017 | संपर्क |