2SD1899 डाटा शीट PDF( Datasheet )

2SD1899 NPN PLASTIC ENCAPSULATE TRANSISTORS P b Lead(Pb)-Free 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emi

isc Silicon NPN Power Transistor DESCRIPTION ·Low collector saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors 2SD1899 TRANSISTOR (NPN) TO – 252 FEATURES z Low VCE(sat) z High Transition Frequency MAXIMUM RATINGS (Ta=25℃ un

NPN Epitaxial Planar Silicon Transistors FEATURES z High hFE hFE=100 to 400. z Low VCE(sat0 VCE(sat)≤0.3V. Pb Lead-free Production specification 2SD1899 ORDERING INFORMATION Type No. Marking 2SD1899 1

2SD1899 Rev.E May.-2016 DATA SHEET 描述 / Descriptions TO-252 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-252 Plastic Package.  特征 / Features 饱和压降低，电流大，fT

isc Silicon NPN Power Transistors DESCRIPTION ·Low Collector Saturation Voltage ·High Power Dissipation- : PC= 10W(Max)@TC=25℃ ·Complement to Type 2SB1261-K ·Minimum Lot-to-Lot variations for robust devi