2SD1845 डाटा शीट PDF( Datasheet )

2SD1845 Unit: mm s q q 21.0± 0.5 15.0± 0.2 0.7 15.0± 0.3 11.0± 0.2 5.0± 0.2 3.2 q q q q φ3.2± 0.1 止 16.2± 0.5 3.2 2.3 2.0± 0.2 2.0± 0.1 0.6± 0.2 Solder Dip 1.1± 0.1 s (TC=25˚C) TC=25

isc Silicon NPN Power Transistor 2SD1845 DESCRIPTION ·Collector-Base Breakdown Voltage- : VCBO= 1300V (Min.) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device p