2SD1816 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1816 DESCRIPTION ·Excellent linearity of hFE ·Small and slim package facilitating compactness of sets ·Low collector-to-emitter saturation voltage

Ordering number:EN2540A PNP/NPN Epitaxial Planar Silicon Transistors www.DataSheet4U.com 2SB1216/2SD1816 High-Current Switching Applications Applications · Suitable for relay drivers, high-speed inverters,

UNISONIC TECHNOLOGIES CO., LTD 2SD1816 NPN PLANAR TRANSISTOR HIGH CURRENT SWITCHING APPLICATIONS  FEATURES * Low collector-to-emitter saturation voltage * Good linearity of hFE * Small and slim package f

2SB1216, 2SD1816 Bipolar Transistor (−)100V, (−)4A, Low VCE(sat), (PNP)NPN Single www.onsemi.com Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactnes

Elektronische Bauelemente 2SD1816 4A , 120V NPN Epitaxial Planar Silicon Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low Collector-to-Emitter Saturation Volta

SMD Type Transistors NPN Transistors 2SD1816 ■ Features ● Low Collector-to-Emitter Saturation Voltage ● Fast Switching Speed ● High fT. ● Complementary to 2SB1216 +9.70 0.2 -0.2 TO-252 6.50+0.15

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min) ·Collector Power Dissipation : PC= 2 W(Max) ·Minimum Lot-to-Lot variations for robust device perform