डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD1785 | Silicon NPN Transistor Darlington
sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD1785 120 120 6 6(Pulse10) 1 30(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
2SD1785
sElectrical Characteristics |
Sanken electric |
|
2SD1785 | NPN Transistor isc Silicon NPN Darlington Power Transistor
2SD1785
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max) @IC= 2A ·High DC Cur |
INCHANGE |
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