डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD1662 | Silicon NPN Transistor 2SD1662
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor)
2SD1662
High Current Switching Applications
Unit: mm
· High DC current gain: hFE = 1000 (min) (VCE = 3 V, IC = 15 A) |
Toshiba Semiconductor |
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2SD1662 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1662
DESCRIPTION ·High DC Current Gain
: hFE= 1000(Min.)@ IC= 15A ·Collector-Emitter Breakdown Voltage-
: V(BR |
Inchange Semiconductor |
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