2SD1616A डाटा शीट PDF( Datasheet )

UNISONIC TECHNOLOGIES CO., LTD 2SD1616/A NPN SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR  DESCRIPTION * Audio frequency power amplifier * Medium speed switching  ORDERING INFORMATION Orderin

MICRO ELECTRONICS 2SD1616A NPN SILICON TRANSISTOR DESCRIPTION 2SD1616A is NPN silicon planar transistor designed for use in driver and output stages of AF amplifier, general purpose application. 4.68 (0.18)

DATA SHEET SILICON TRANSISTORS 2SD1616, 2SD1616A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES • Low VCE(sat): VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB =

www.DataSheet4U.com 2SD1616 2SD1616A NPN Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Vol

Elektronische Bauelemente 2SD1616A 1A , 120V NPN Plastic-Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  Power dissipation CLASSIFICATION OF hF

RoHS 2SD1616A 2SD1616A TRANSISTOR (NPN) TO-92 FEATURE DPower dissipation TPCM: 0.75 W (Tamb=25℃) .,LCollector current ICM: Collector-base voltage 1A V(BR)CBO: 120 V OOperating and storage junction

ST 2SD1616 / 2SD1616A NPN Silicon Transistor The 2SD1616 / 2SD1616A are designed for use in driver and output stages of AF amplifier general purpose application. The transistor is subdivided into three groups R