डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD1602 | Power Transistor isc Silicon NPN Darlington Power Transistor
2SD1602
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·High DC Current Gain
: hFE= 1000(Min) @IC= 2A ·Complement to Type 2SB1102 ·Minim |
Inchange Semiconductor |
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2SD1609 | Silicon NPN Transistor | Hitachi Semiconductor |
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2SD1601 | Power Transistor | Inchange Semiconductor |
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2SD1602 | Power Transistor | Inchange Semiconductor |
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2SD1603 | Silicon NPN Darlington Power Transistor | Inchange Semiconductor Company |
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2SD1606 | Silicon NPN Transistor | Hitachi Semiconductor |
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2SD1609 | Silicon NPN transistor | BLUE ROCKET ELECTRONICS |
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2SD1605 | Power Transistor | Inchange Semiconductor |
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2SD1609 | NPN Transistor | INCHANGE |
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2SD1607 | NPN Transistor | INCHANGE |
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2SD1604 | Power Transistor | Inchange Semiconductor |
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