2SD1475 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor 2SD1475 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) ·Good Linearity of hFE ·Min

Power Transistors 2SD1475 www.DataSheet4U.com Silicon NPN triple diffusion planar type For power switching 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 Unit: mm 4.2±0.2 s Features q q q q High-speed swit