2SD1446 डाटा शीट PDF( Datasheet )

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1446 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) · Low Collector-Emitter Saturation Voltage- : VCE(sat

Power Transistors 2SD1446 Silicon NPN triple diffusion planar type Darlington For power amplification 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 4.2±0.2 Unit: mm 7.5±0.2 s Features q q q 4.0 High f

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1446 www.datasheet4u.com DESCRIPTION ·With TO-220Fa package ·High DC current gain ·High collector to base voltage VCBO ·DAR