2SD144 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD144 DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= 1A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 50V(Min) ·With TO-66 Package ·Minimum

isc Silicon NPN Power Transistor 2SD1440 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1441 www.datasheet4u.com DESCRIPTION ·With TO-3PN package ·Built-in damper diode ·High voltage ,high reliability ·High spee

isc Silicon NPN Power Transistor 2SD1441 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance

Power Transistors 2SB953, 2SB953A Silicon PNP epitaxial planar type For low-voltage switching Complementary to 2SD1444 and 2SD1444A 0.7±0.1 Unit: mm 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package www.datasheet4u.com ·Low collector saturation voltage ·High speed switching ·High collector cu

isc Silicon NPN Power Transistor 2SD1444 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.6V(Max)@ IC= 5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 20V (Min) ·Complement to Type 2SB956