डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD1436 | Silicon NPN Transistor 2SD1436(K)
Silicon NPN Triple Diffused
Application
Power switching complementary pair with 2SB1032(K)
Outline
TO-3P
2
1 1. Base 2. Collector (Flange) 3. Emitter
1
1.5 kΩ (Typ)
130 Ω (Typ) 3
2
3
2S |
Hitachi Semiconductor |
|
2SD1436 | NPN Transistor isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·High DC Current Gain
: hFE= 1000(Min.)@ IC= 5A, VCE= 3V ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 120V(Min) ·Complement to Type 2SB1032 ·Mi |
INCHANGE |
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2SD1436K | Silicon NPN Transistor 2SD1436(K)
Silicon NPN Triple Diffused
Application
Power switching complementary pair with 2SB1032(K)
Outline
TO-3P
2
1 1. Base 2. Collector (Flange) 3. Emitter
1
1.5 kΩ (Typ)
130 Ω (Typ) 3
2
3
2S |
Hitachi Semiconductor |
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