डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD1417 | NPN Transistor isc Silicon NPN Darlington Power Transistor
2SD1417
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min) ·High DC Current Gain-
: hFE= 2000(Min)@ (VCE= 3V, IC= 3A) ·Low Collector Saturati |
INCHANGE |
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2SD1415A | Silicon NPN Transistor | Toshiba Semiconductor |
|
2SD1414 | SILICON POWER TRANSISTOR | SavantIC |
|
2SD1416 | Silicon NPN Darlington Power Transistor | INCHANGE |
|
2SD1411 | SILICON POWER TRANSISTOR | SavantIC |
|
2SD1412A | Silicon NPN Transistor | Toshiba Semiconductor |
|
2SD1410A | Silicon NPN Transistor | Toshiba Semiconductor |
|
2SD1415 | NPN Transistor | INCHANGE |
|
2SD1411A | NPN Transistor | Toshiba Semiconductor |
|
2SD1418 | Silicon NPN Transistor | Hitachi Semiconductor |
|
2SD1410 | Silicon NPN Darlington Power Transistor | INCHANGE |
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