डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD1416 | Silicon NPN Darlington Power Transistor isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain
|
INCHANGE |
|
2SD1415A | Silicon NPN Transistor | Toshiba Semiconductor |
|
2SD1414 | SILICON POWER TRANSISTOR | SavantIC |
|
2SD1416 | Silicon NPN Darlington Power Transistor | INCHANGE |
|
2SD1411 | SILICON POWER TRANSISTOR | SavantIC |
|
2SD1412A | Silicon NPN Transistor | Toshiba Semiconductor |
|
2SD1410A | Silicon NPN Transistor | Toshiba Semiconductor |
|
2SD1415 | NPN Transistor | INCHANGE |
|
2SD1411A | NPN Transistor | Toshiba Semiconductor |
|
2SD1418 | Silicon NPN Transistor | Hitachi Semiconductor |
|
2SD1410 | Silicon NPN Darlington Power Transistor | INCHANGE |
www.DataSheet.in | 2017 | संपर्क |