डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD1415 | NPN Transistor isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain |
INCHANGE |
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2SD1415A | Silicon NPN Transistor 2SD1415A
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
2SD1415A
High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications
Unit: mm
• High DC current gain: hFE = 2000 |
Toshiba Semiconductor |
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2SD1415A | NPN Transistor isc Silicon NPN Darlington Power Transistor
2SD1415A
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Cu |
INCHANGE |
|
2SD1415A | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1415A
www.datasheet4u.com
DESCRIPTION ·With TO-220F package ·High DC current gain ·Low saturation voltage ·DARLINGTON APPLI |
SavantIC |
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