2SD1412 डाटा शीट PDF( Datasheet )

: SILICON NPN TRIPLE DIFFUSED TYPE * 2SD1412 HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. Unit in mm 10.3MAX. 7.0 03.2±O.2 FEATURES . Low Saturation Voltage : VcE(sat)=0.4V(Max. ) . C

isc Silicon NPN Power Transistor 2SD1412 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC= 4A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V (Min) ·Complement to Type 2SB1019

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1412A High-Current Switching Applications Power Amplifier Applications 2SD1412A Unit: mm • Low saturation voltage: VCE (sat) = 0.4 V (max) at IC = 4 A