डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD1411 | NPN Transistor :
2SD1411
SILICON NPN TRIPLE DIFFUSED TYPE
HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS.
FEATURES
. Low Saturation Voltage : vCE(sat)=0.5V(Max.)
. Complementary to 2SB1018
at I C=4A
U |
Toshiba |
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2SD1411 | NPN Transistor isc Silicon NPN Power Transistor
2SD1411
DESCRIPTION ·Low Collector Saturation Voltage
: VCE(sat)= 0.5V(Max)@ IC= 4A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V (Min) ·Complement to Type 2SB1018 |
INCHANGE |
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2SD1411 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1411
www.datasheet4u.com
DESCRIPTION ·With TO-220Fa package ·Low saturation voltage ·Complementary to 2SB1018 APPLICATIONS |
SavantIC |
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2SD1411A | NPN Transistor TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD1411A
High-Current Switching Applications Power Amplifier Applications
2SD1411A
Unit: mm
• Low saturation voltage: VCE (sat) = 0.5 V (max) at IC = 4 A |
Toshiba Semiconductor |
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