डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD1410 | NPN Transistor 2SD1410
SILICON NPNTRIPLE DIFFUSED TYPE (DARLINGTON POWER)
IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS.
FEATURES . High DC Current Gain : hFE=2000(Min. ) (Vce=2V,
Ic=2A)
INDUSTRIAL APPLICATIO |
Toshiba |
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2SD1410 | Silicon NPN Darlington Power Transistor isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 250V(Min) ·Collector-Emitter Saturation Voltage-
:V CE(sat)= 2.0V(Max) @IC= 4A ·High DC Current Ga |
INCHANGE |
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2SD1410A | Silicon NPN Transistor 2SD1410A
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
2SD1410A
High Voltage Switching Applications
Industrial Applications Unit: mm
• High DC current gain: hFE = 2000 (min) (VCE = 2 V, |
Toshiba Semiconductor |
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