डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD1409A | NPN Transistor 2SD1409A
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
2SD1409A
High Voltage Switching Applications
Industrial Applications Unit: mm • •
High DC current gain: hFE = 600 (min.) (VCE = 2 |
Toshiba Semiconductor |
|
2SD1409A | NPN Transistor INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1409A
DESCRIPTION ·High collector-emitter breakdown voltage-
: V(BR)CEO= 400V(Min) ·High DC current Gain
: hFE |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |