डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD1409 | Silicon NPN Transistor :
SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER)
IGNITER APPLICATIONS.
HIGH VOLTAGE SWITCHING APPLICATIONS.
FEATURES . High DC Current Gain : hFE=600(Min. ) ( V CE=2V, I C=2A) . Monolithic Construction wi |
Toshiba |
|
2SD1409 | NPN Transistor isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min) ·High DC Current Gain
: hFE= 600(Min) @ IC= 2A, VCE= 2V ·Minimum Lot-to-Lot variation |
INCHANGE |
|
2SD1409 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1409
www.datasheet4u.com
DESCRIPTION ·With TO-220Fa package ·High DC current gain ·DARLINGTON APPLICATIONS ·Igniter applica |
SavantIC |
|
2SD1409A | NPN Transistor 2SD1409A
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
2SD1409A
High Voltage Switching Applications
Industrial Applications Unit: mm • •
High DC current gain: hFE = 600 (min.) (VCE = 2 |
Toshiba Semiconductor |
|
2SD1409A | NPN Transistor INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1409A
DESCRIPTION ·High collector-emitter breakdown voltage-
: V(BR)CEO= 400V(Min) ·High DC current Gain
: hFE |
INCHANGE |
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