2SD1407 डाटा शीट PDF( Datasheet )

:) SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. FEATURES . High Breakdown Voltage : Vqeo=100V . Low Collector Saturation Voltage : VcE(sat) =2 - 0V(Max. . Complementary to 2SB1016 . Recommend

isc Silicon NPN Power Transistor 2SD1407 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 2.0V(Max)@ IC= 4A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min) ·Complement to Type 2SB1016

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1407 www.datasheet4u.com DESCRIPTION ·With TO-220Fa package ·High breakdown voltage ·Low collector saturation voltage ·Comp

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1407A 2SD1407A Power Amplifier Applications Industrial Applications Unit: mm • High breakdown voltage: VCEO = 100 V • Low collector saturation volt