डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD1351 | Silicon NPN Power Transistors isc Silicon NPN Power Transistor
2SD1351
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min) ·Collector Power Dissipation-
: PC= 30W@ TC= 25℃ ·Low Collector Saturation Voltage-
: VCE(s |
Inchange Semiconductor |
|
2SD1351 | NPN Complementary Silicon Power Transistors 2SD1351
®
2SD1351
Pb
Pb Free Plating Product
NPN Complementary Silicon Power Transistors
FEATURES
z Complements the 2SB988. z Wide Safe Operationg Area. z Fast Switching Speed. z Wide ASO.
APPLICATIONS z |
Thinki Semiconductor |
www.DataSheet.in | 2017 | संपर्क |