डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD1173 | Silicon NPN Transistor isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1173
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 4.0V(Max.)@ IC= 3.0A ·Built-in Da |
Inchange Semiconductor |
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2SD1173 | Si NPN Transistor www.DataSheet4U.com
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Panasonic Semiconductor |
www.DataSheet.in | 2017 | संपर्क |