डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD1170 | Power Transistor INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1170
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 120V(Min.) ·Low Collector Saturation Voltage ·High DC Current Gain |
Inchange Semiconductor |
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2SD1175 | SILICON POWER TRANSISTOR | SavantIC |
|
2SD1170 | Power Transistor | Inchange Semiconductor |
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2SD1173 | Si NPN Transistor | Panasonic Semiconductor |
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2SD1171 | Silicon NPN Transistor | Inchange Semiconductor |
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2SD1172 | Silicon NPN Transistor | Inchange Semiconductor |
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2SD1172 | Si NPN Transistor | Panasonic Semiconductor |
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2SD1175 | NPN Transistor | INCHANGE |
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2SD1174 | Si NPN Transistor | Panasonic Semiconductor |
|
2SD1173 | Silicon NPN Transistor | Inchange Semiconductor |
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