2SD1119 डाटा शीट PDF( Datasheet )

Transistor 2SD1119 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm s Features 2.6±0.1 4.5±0.1 1.6±0.2 1.5±0.1 q q q Low collector to emitter saturation voltage VCE(sa

2SD1119 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions SOT-89 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-89 Plastic Package.  特征 / Features 饱和压降低,功率高和电�

Silicon NPN epitaxial planar type FEATURES z Low collector-emitter saturation voltage VCE(sat). z Satisfactory operation performances at high efficiency with the low-voltage power supply. Pb Lead-free Produc

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SD1119 TRANSISTOR (NPN) FEATURES z Low collector-emitter saturation voltage VCE(sat) z Satisfactory operation perfo

Plastic-Encapsulate Transistors FEATURES • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances at high efficiency with the low voltage power supply. Maximum Ratings (Ta

SMD Type Silicon NPN epitaxial planar type 2SD1119 Transistors Features Low collector-emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the lowvoltage power supp

2SD1119 SOT-89 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Volt