2SD111 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor DESCRIPTION ·High Power Dissipation- : PC= 100W@TC= 25℃ ·High Current Capability- : IC = 10A ·Minimum Lot-to-Lot variations for robust device performance and reliable oper

isc Silicon NPN Power Transistor 2SD1110 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Complement to Type 2SB849 ·Minimum Lot-to-Lot variations for robust

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1110 www.datasheet4u.com DESCRIPTION ·With TO-3PFa package ·Complement to type 2SB849 ·Wide area of safe operation APPLICATI

Ordering number:EN751C NPN Epitaxial Planar Silicon Darlington Transistor 2SD1111 Driver Applications Applications · Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. Features

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1113 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 300V(Min) ·High DC Current Gain : hFE= 500(Min) @IC= 4A ·Minimum

2SD1113(K) Silicon NPN Triple Diffused Application Igniter Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 3. Emitter 1 2 3 6 kΩ (Typ) 450 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Co

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitach