2SD110 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor DESCRIPTIONV ·High Power Dissipation- : PC= 100W@TC= 25℃ ·High Current Capability- : IC = 10A ·Minimum Lot-to-Lot variations for robust device performance and reliable ope

2SD1101 Silicon NPN Epitaxial Application • Low frequency amplifier • Complementary pair with 2SB831 Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SD1101 Absolute Maximum Ratings (Ta = 25°C) Ite

SMD Type Silicon NPN Epitaxial 2SD1101 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 Low Frequency amplifier. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +

2SD1101 Silicon NPN Epitaxial REJ03G0775-0200 (Previous ADE-208-1142) Rev.2.00 Aug.10.2005 Application • Low frequency amplifier • Complementary pair with 2SB831 Outline RENESAS Package code: PLSP0003ZB-A

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Wide Area of Safe Operation ·High Power and High Reliability ·Minimum Lot-to-Lot variations for rob