2SD1061 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.4V(Max) @IC= 4.0A ·Complement to Type 2SB825

Ordering number:687G PNP/NPN Epitaxial Planar Silicon Transistors 2SB825/2SD1061 50V/7A Switching Applications Applications · Universal high current switching as solenoid driving, high speed inverter and con

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package www.datasheet4u.com ·Low collector saturation voltage ·Wide ASO(safe operating area) ·Complement