2SD1060 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.4V(Max) @IC= 3.0A ·Complement to Type 2SB824

Ordering number:686I PNP/NPN Epitaxial Planar Silicon Transistors 2SB824/2SD1060 50V/5A Switching Applications Applications · Suitable for relay drivers, high-speed inverters, converters, and other general l

UTC 2SD1060 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR SILICON TRANSISTOR FEATURE *Low collector-to-emitter saturation voltage: VCE(sat)=0.4V max/IC=3A, IB=0.3A 1 APPLICATIONS *Suitable for relay d

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1060 www.datasheet4u.com DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·Complement to type 2SB824 APPLI

Ordering number : EN686K 2SD1060 Bipolar Transistor 50V, 5A, Low VCE(sat) NPN TO-220-3L http://onsemi.com Applications • Suitable for relay drivers, high-speed inverters, converters, and other general larg